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IRF2807SPBF irf2807lpbf hexfet ? power mosfet v dss = 75v r ds(on) = 13m ? i d = 82a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf2807l) is available for low- profile applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 82 i d @ t c = 100c continuous drain current, v gs @ 10v 58 a i dm pulsed drain current 280 p d @t c = 25c power dissipation 230 w linear derating factor 1.5 w/c v gs gate-to-source voltage 20 v i ar avalanche current 43 a e ar repetitive avalanche energy 23 mj dv/dt peak diode recovery dv/dt 5.9 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) d 2 pak IRF2807SPBF to-262 irf2807lpbf 1 parameter typ. max. units r jc junction-to-case ??? 0.75 r ja junction-to-ambient (pcb mount)** ??? 40 thermal resistance c/w www.kersemi.com

2 s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 43a, v gs = 0v t rr reverse recovery time ??? 100 150 ns t j = 25c, i f = 43a q rr reverse recovery charge ??? 410 610 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 82 280 starting t j = 25c, l = 370h r g = 25 ? , i as = 43a, v gs =10v (see figure 12) repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 43a di/d 300a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. **when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.074 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 13 m ? v gs = 10v, i d = 43a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 38 ??? ??? s v ds = 50v, i d = 43a ??? ??? 25 a v ds = 75v, v gs = 0v ??? ??? 250 v ds = 60v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 160 i d = 43a q gs gate-to-source charge ??? ??? 29 nc v ds = 60v q gd gate-to-drain ("miller") charge ??? ??? 55 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 13 ??? v dd = 38v t r rise time ??? 64 ??? i d = 43a t d(off) turn-off delay time ??? 49 ??? r g = 2.5 ? t f fall time ??? 48 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3820 ??? v gs = 0v c oss output capacitance ??? 610 ??? v ds = 25v c rss reverse transfer capacitance ??? 130 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 1280 340 mj i as = 50a, l = 370h nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns

i dss drain-to-source leakage current www.kersemi.com

3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 71a www.kersemi.com

4 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 40 80 120 160 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 43a v = 15v ds v = 37v ds v = 60v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec www.kersemi.com

5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 %

+ -

www.kersemi.com

6 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 18a 30a 43a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs www.kersemi.com

7
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ?

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8 n ote: "p " in as s embly line pos ition indicates "l ead-f ree" f 530s t h is is an ir f 530s wit h lot code 8024 as s emb led on ww 02, 2000 in the assembly line "l" as s e mb l y lot code in t e r n at ion al rectifier logo part number date code ye ar 0 = 2000 week 02 line l f 530s a = as s e mb l y s it e co d e we e k 02 p = de s ignat e s l e ad-f r e e product (optional) r e ct if ie r int e r nat ional logo lot code assembly ye ar 0 = 2000 date code part number

dimensions are shown in millimeters (inches) www.kersemi.com

9 to-262 part marking information to-262 package outline assembly lot code rectifier int e r n at ional as s e mb l e d on ww 19, 1997 n ote: "p " in as s embly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t h is is an ir l 3103l lot code 1789 example: line c dat e code week 19 ye ar 7 = 1997 part number part number logo lot code assembly int e r n at ional rectifier product (optional) p = d e s ign at e s l e ad -f r e e a = assembly site code week 19 ye ar 7 = 1997 date code or www.kersemi.com

3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation www.kersemi.com

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